Plasma-Enhanced Atomic Layer Deposition of TiAlN: Compositional and Optoelectronic Tunability

Introduction to (plasma-enhanced) atomic layer deposition

Film growth by the atomic layer deposition (ALD) method relies on alternate pulsing of the precursor gases and vapors into a vacuum chamber and their subsequent chemisorption on the substrate surface (Fig. 1) [1,2]. The different steps in the process are saturative such that ALD film growth is self-limiting yielding one submonolayer of film per deposition cycle. ALD has some unique characterist...

Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition

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Review of plasma-enhanced atomic layer deposition: Technical enabler of nanoscale device fabrication

Inhibition of Crystal Growth during Plasma Enhanced Atomic Layer Deposition by Applying BIAS

In this study, the influence of direct current (DC) biasing on the growth of titanium dioxide (TiO₂) layers and their nucleation behavior has been investigated. Titania films were prepared by plasma enhanced atomic layer deposition (PEALD) using Ti(OiPr)₄ as metal organic precursor. Oxygen plasma, provided by remote inductively coupled plasma, was used as an oxygen source. The TiO₂ films were d...

Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition

Hexagonal boron nitride (h-BN) has been previously manufactured using mechanical exfoliation and chemical vapor deposition methods, which make the large-scale synthesis of uniform h-BN very challenging. In this study, we produced highly uniform and scalable h-BN films by plasma-enhanced atomic layer deposition, which were characterized by various techniques including atomic force microscopy, tr...